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We demonstrate Zn-diffusion InAs-based high-speed photodiodes (PDs) fabricated on semi-insulating (S.I.) GaAs substrates. The Zn-diffusion profile in our PDs is used to minimize the influence of the surface-state on the dark current, which is an issue for small (high-speed) InAs PDs with a large surface-to-volume ratio. Compared to control without Zn-diffusion, our device exhibits a much lower dark...
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