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The present paper compares the effects of AC and DC electrical stress on low-k SiOCH and high-k ZrO2 and Ta2O5 back-end dielectrics. A wide panel of stress conditions has been assessed, mixing DC, unipolar/bipolar and relaxation times. The DC-stress being the reference stress condition, no enhancement of the time-to-breakdown (TBD) has been found with pure bipolar stress. On the contrary unipolar...
SiOCH low-k dielectrics introduction in copper interconnects associated to the critical dimensions reduction in sub 45 nm technology nodes is a challenge for reliability engineers. Circuit wear-out linked to low-k dielectric breakdown is now becoming a major concern. With the reduction of the line to line spacing, the control of the copper line topology is becoming a first order parameter governing...
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