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The first standard CMOS IC foundry flow is presented for the monolithic integration of MEMS sensor, analog readout circuit and wafer level capping on standard 0.18um 1P6M technology. The sensor and circuit parts are fabricated at first on the same 8″ substrate using a standard 0.18um 1P6M CMOS process. The sensor part is then micromachined and released by a foundry-based post-CMOS DRIE process followed...
A multilevel back-end-of-line structure with a dielectric constant κ ≤ 2.4 ultra low-κ materials was developed. κ=2.2 ULK build was demonstrated at a 144nm wiring pitch and a κ=2.4 ULK was demonstrated at a 288nm pitch. Good model-to-hardware correlation for the measured capacitance indicated no significant plasma damage to the ULK 2.2 material. The extracted copper resistivity was consistent with...
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