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Ultraviolet photoelectron spectroscopy (UPS) using synchrotron radiation was applied for monitoring in situ gas source molecular beam epitaxy (GSMBE) of silicon with disilane on a Si(001)2 x 1 surface. By the in situ UPS observation, information on the hydrogen adsorption state, the hydrogen-free coverage, the work function and the growth rate could be obtained during GSMBE. From the Arrhenius plots...
Ultraviolet photoelectron spectroscopy (UPS) using synchrotron radiation was applied for monitoring in situ gas source molecular beam epitaxy (GSMBE) of silicon with disilane on a Si(001)2 1 surface. By the in situ UPS observation, information on the hydrogen adsorption state, the hydrogen-free coverage, the work function and the growth rate could be obtained during GSMBE. From the Arrhenius plots...
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