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High quality InSb and InSbN alloys were grown epitaxially on InSb (100) by metal-organic chemical vapor deposition. Low temperature photoluminescence spectra of InSb epilayers revealed that in addition to the main band-to-band emission around 5.4 μm, an emission peak around 5.87 μm was also be observed. Our results indicate that the low energy emission peak was originated from the antisite SbIn defects...
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