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We have investigated growth of InTlAs and TlAs by molecular-beam epitaxy (MBE) onto both InAs-buffered and unbuffered GaAs substrates. In accordance with more recent predictions by the theorists who originally proposed InTlAs and two other related thallium-based compounds for long-wave infrared applications, we have observed experimentally that incorporation of thallium into InTlAs is indeed difficult...
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