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RF losses and non-linear behavior of RF passive elements such as coplanar transmission lines and inductors are analyzed. The investigated trap-rich HR-Si wafers with a fixed oxide layer of 150 nm-thick show true effective resistivity values higher than 4 kΩ-cm up to 5 GHz and harmonic distortion levels lower than −90 dBm for a 900 MHz input with signal level of +25 dBm. High quality factor of 60 is...
In this work, two novel RF substrate technologies are compared, namely local porous Si RF substrate technology and high resistivity Si with a trap-rich layer on top (trap-rich HR-Si). Using standard Si processing, identical co-planar waveguide transmission lines and test inductors were fabricated on the above two substrates, as well as on quartz and on standard p-type Si. Broadband electrical characterization...
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