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Optoelectronic properties of Cu(In 1–x Ga x )Se 2 (CIGSe) have been studied by confocal microscopic photoluminescence (PL) with lateral submicron resolution. The lateral patterns of PL-yields, varying by factors of up to 10 between regimes with low and high emission, exhibit structures in the length scale of some micrometers (3–10 μm) whereas geometrical sizes of individual...
We analyze the quality of the photoexcited state in Cu(In,Ga)Se 2 absorbers prepared under conditions similar to module pilot line production with different Ga-admixtures in terms of the splitting of the quasi-Fermi levels by confocal microscopic photoluminescence (PL) with submicron lateral resolution. The lateral luminescence patterns exhibit structures in the length scale of some micrometers...
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