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Implant activation annealing of Si-implanted GaN is reported for temperatures from 1100 to 1400°C. Free electron concentrations up to 3.5×1020 cm−3 are estimated at the peak of the implanted profile with Hall mobilities of ∼60 cm2/Vs for annealing at 1300°C for 30 s with an AIN encapsulant layer. This mobility is comparable to epitaxial GaN doped at a similarly high level. For annealing at ≥1300°C,...
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