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Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a leading candidate for embedded memory applications, with promises of low power, high performance, and non-volatility.
Spin Transfer Torque Magnetic Random Access Memories (STT-MRAM) are based on Magnetic Tunnel Junctions (MTJs) made out of two ferromagnetic electrodes separated by a MgO tunnel barrier.
We present for the first time a fully functional 40 nm perpendicular STT-MRAM macro (1 Mb, ×32/×64 IO) embedded into a foundry standard CMOS logic platform. We achieved target design specifications of 20 ns read access time and 20–100 ns write cycle time without redundancy repair at standard core and IO voltages. The full 1 Mb macro can be switched reliably with write pulse as short as 6 ns, which...
The recent rise of mobile applications such as Internet of Things (IoT), wearable electronics, and context aware computing has renewed the search for a universal embedded memory technology [1]. Such a technology should combine fast read/write, low voltage operation, low power consumption, non-volatility, infinite endurance, with CMOS process compatibility. Magnetic Random Access Memory based on Spin...
We demonstrate the writability of an entire 8 Mb STT-MRAM chip and present data on the expected endurance and data retention up to 90 °C. The chip utilizes a device structure that displays high spin-transfer torque efficiency and proper write-current scaling, down to write pulse width of about 1.5 ns.
We have demonstrated a robust magnetic tunnel junction (MTJ) with a resistance-area product RA=8 Omega-mum2 that simultaneously satisfies the statistical requirements of high tunneling magnetoresistance TMR > 15sigma(Rp), write threshold spread sigma(Vw)/<Vw> <7.1%, breakdown-to-write voltage margin over 0.5 V, read-induced disturbance rate below 10-9, and sufficient write endurance, and...
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