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A Hybrid Electric Vehicle longitudinal dynamics model for the control of energy management is developed. The model is implemented using Simulink® and consists of a transitional vehicle speed input parameterized by, for example, the New European Driving Cycle. It is a backward looking model in that engine and motor on/off states are determined by the controller, dependent on wheel torque requirements...
A Simulink® Hybrid Electric Vehicle dynamics model for the control of energy management and vehicle stability is developed. The model encompasses a transitional vehicle speed input parameterized by the New European Driving Cycle. Internal combustion engine torque, motor torque and varying corner radii are set to the same time constraints as the drive cycle. Lateral acceleration, yaw rate and tyre...
An array of Circular Transmission Line Model (CTLM) metal contacts was deposited onto the upper surface of the n-SiC/Si chips using laser micromachining as an alternative to standard photolithography technique. Thin epitaxial n-type 3C-SiC/Si chips were used since no current leakage observed in previous studies. Various laser energies were used for the CTLM pattern transfer. Low values of ρc were...
Thin films of nickel germanide conveniently form at the relatively low temperature of 300C in a matter of minutes and at even lower temperatures over a longer time. Here we report on the formation of NiGe on crystalline germanium substrates at low temperatures (less than 300C). Ni films deposited on Ge substrates formed NiGe by heating the samples in an atmosphere nearly void of oxygen. Ni films of...
We present the experimentally determined specific contact resistivity of as deposited nickel to highly doped n-type 3-C silicon carbide using a novel test structure. The specific contact resistivity, extracted using this test structure and the corresponding methodology, is (0.8–5.7)×10−6 Ω·cm2•
Multiple layer ohmic contact structures incorporating silicide materials are becoming increasingly popular in semiconductor devices. However the use of multiple layers for ohmic contacts makes the modelling and calculation of the contact resistance Rc a non-trivial problem. In this paper results from the analytical Tri-Layer Transmission Line Model (TLTLM) and a two-dimensional finite-element model...
Ohmic contacts to p-type In1-x GaxAs/InP with an intermediate superlattice region have been examined for use in InGaAs/InGaAlAs/InP lasers. Four metallizations (Pd/Zn/Pd/Au, Pd/Mn/Sb/Pd/Au, Ni/Zn/Ni/Au and Au/Zn/Au) were evaluated in these contacts for the first time. All of the metallizations exhibited a low resistivity, a smooth surface morphology and thermal stability. However, the Pd/Zn/Pd/Au...
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