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The spectral response of back-surface-illuminated p-GaN-i-GaN/AlGaN multiplequantum well (MQW)-n-AlGaN ultraviolet (UV) photodetector is reported. The structure was grown by molecular-beam epitaxy on a c-plane sapphire substrate. A MQW is introduced into the active region of the device to enhance the quantum efficiency caused by the high absorption coefficient of the two-dimensional (2-D) system....
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