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The microstructures and the residual-stress of thin-cubic GaN epilayers grown on Si(001) substrate coated with a thin flat SiC buffer layer were studied. The thin SiC layer is an effective buffer layer for GaN growth. Near the GaN/SiC interface there are many stacking faults, micro-twins, and micro-hexagonal phase induced by large compressive stress. All these planar defects do not introduce energy...
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