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Energetic ion‐beam‐induced mixing between Co and Si has been studied in a Si (∼5 nm)/Co (∼10 nm) bilayer system deposited on a Si (111) substrate for various ion fluences, ranging from 3 × 1014 ions/cm2 to 1 × 1015 ions/cm2. The amount of ion irradiation induced migration of Co atoms and the predominant direction of this migration (inward or outward) from the Co layer have been determined using combined...
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