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We report on large-area photoconductive THz emitters and detectors with an LT-GaAs active region fabricated on quartz substrates using a lift-off transfer process. These devices are compared to the same LT-GaAs emitters when fabricated on the growth substrate. We find that the transferred devices show higher optical-to-THz conversion efficiencies and significantly larger breakdown fields.
THz coplanar waveguides were fabricated on quartz wafers with integrated epitaxially transferred low temperature grown gallium arsenide photoconductive switches. THz radiation was excited on-chip and transmitted through a tapering of the coplanar waveguide structure where it was focused down to ∼ 1.66μm. Theoretical modelling of the device confirms high E-field confinement and concentration.
We introduce a method for estimating the permittivity of liquid samples measured using integrated microfluidic/planar Goubau line terahertz waveguides, in which simulation results are combined with practical data to enable more accurate frequency-dependent analysis.
In this paper we report on a novel fabrication approach for the manufacture of terahertz waveguides with embedded metal rods. It is anticipated that this type of structure could be used for sub-wavelength imaging or as a method to effectively couple radiation into biological samples.
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