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Heavy ion induced SEEs for the quiet series FACT devices are presented. SETs take place in devices with memory elements as well as in simple gates. These devices are tolerant to SEEs at low LET values
We present single event upset sensitivities for three Xilinx Virtex-4 field-programmable-gate-array (FPGA) devices in protons and heavy ions. Upsets are identified in each functional block and results compared with previous device generations
Single event effect vulnerabilities of currently available commercial-off-the-shelf (COTS) field programmable gate arrays (FPGAs) have been measured. They are compared with those observed in older COTS devices as well as with some radiation hardened devices
We compare the results of single event effects in two sizes and grades of programmable read-only-memories (PROMs) in the Xilinx 17xx device family. The main failure modes include address upsets, end-of-part failures, and a low-power standby mode requiring a power cycle to recover.
Single event effects sensitivity measurements of advanced flash and first-in-first-out memories have been made. While many upsets are transients, other upsets initiated by high LET ions are semi-permanent.
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