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We studied the electron impact ionization of silane (SiH 4 ) which is widely used in the plasma deposition of different silicon-containing thin films. Absolute partial cross-sections for the formation of all fragment ions were measured in a high resolution double focusing sector field mass spectrometer with a modified ion extraction stage for electron energies from threshold to 100 eV. No...
Absolute cross-sections for the electron impact ionization and dissociative ionization of the ND 3 molecule and the ND 2 and ND free radicals were measured from threshold to 200 eV using the fast neutral beam technique. The deuterated rather than protonated targets were used in this work to facilitate a better separation of the various product ions from a given parent in our apparatus...
We studied the electron impact ionization of tetramethylsilane (TMS), Si(CH 3 ) 4 , which is utilized in plasma polymerization applications, using various mass spectrometric techniques. Absolute partial cross-sections for the formation of the parent ion and 15 fragment ions were measured in a high resolution double-focusing sector field mass spectrometer from threshold to 90 eV. ...
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