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Indium-tin-oxynitride (ITON) and indium-tin-oxide (ITO) thin films have been fabricated by r.f. sputtering from an indium-tin-oxide target in a plasma containing N 2 and Ar gases, respectively. The properties of films grown at two different plasma pressures were examined just after deposition and after annealing. Although the electrical properties of these films were improved after annealing,...
With the r.f.-superimposed DC-magnetron sputtering process transparent and conducting indium-tin-oxide (ITO) films were deposited. The optical, electrical and structural properties of films deposited with different process parameters were investigated. It was shown that ITO-films sputtered with the r.f.-superimposed DC-magnetron gas discharge have resistivities that are much lower than the resistivities...
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