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This work addresses center frequency and bandwidth tunable filter for implementation in RF base-station front-ends. The filter is fabricated using functional thick-film layers of Barium-Strontium-Titanate (BST). The deposition of BST layers is performed locally in a screen printing process. The fabricated varactors have a Q-factor around 40 at 1 GHz, a tunability larger than 50% and a measured IP3...
This work addresses tunable matching networks (TMN) for in-package integration of RF-power transistors, fabricated on functional thick film layers of Barium-Strontium-Titanate (BST). The deposition of BST layers is performed in a screen printing process. The TMN is designed to cover the typical GaN-HEMT output impedance range from 7 Ohm to 20 Ohm and transforms it directly to 50 Ohm. The insertion...
This work addresses tunable matching networks (TMN) for in-package integration of RF-power transistors, fabricated on functional thick film layers of Barium-Strontium-Titanate (BST). The deposition of BST layers is performed in a screen printing process. The TMN is designed to cover the typical GaN-HEMT output impedance range from 7 Ohm to 20 Ohm and transforms it directly to 50 Ohm. The insertion...
This work addresses tunable matching networks fabricated on functional thick film layers of Barium-Strontium-Titanate (BST) for RF-power transistors. The deposition of BST layers is performed in a screen-printing process and the fabricated components are patterned by photolithography. Around 2.0 GHz, the insertion loss varies in a range between 0.7 dB and 1.1 dB depending on the tuning state and frequency,...
This paper addresses the design and measurement of a low cost tunable impedance matching network (TMN) employing Barium-Strontium-Titanate (BST) for high frequency and high power applications. Based on requirements of a class AB mode high power amplifier, a pi-topology circuit was designed, photo-lithographically processed and measured. The work demonstrates a tunable matching network, transforming...
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