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In this work we report the surface morphology of amorphous germanium (a-Ge) thin films (140nm thickness) following thermal outgassing of SiO2/Si substrates. The thermal outgassing was performed by annealing the samples in air at different temperatures from 400 to 900°C. Annealing at 400°C in slow (2°C/min) and fast (10°C/min) modes promotes the formation of bubbles on the surface. A cross sectional...
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