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RF CMOS technology provides a platform for the production of analog, digital and RF circuits on a single chip for futuristic high-level integration. This facilitates the need for a robust compact model for RF FinFETs to study the circuits in a precise and convenient way. In this paper, we have characterized 14-nm N-channel bulk FinFETs by performing two-port S-parameter measurements. Further, BSIM-CMG...
In this paper we present a model to capture the effect of the body-bias on the overlap capacitances. The main hurdle while introducing body-bias dependence in gate-source and gate-drain overlap capacitances is maintaining reciprocity for all capacitances. We propose a subcircuit approach to help maintain reciprocity while including body-bias dependence in overlap charges. The approach is generic,...
Recently, experimental Germanium CMOS devices and circuit are reported for advanced technology nodes for the first time. In this paper, we have modeled Germanium On Insulator (GeOI) device with industry standard compact model for independent double gate MOSFET (BSIM-IMG) with updated mobility model. It is shown that BSIM-IMG with updated mobility model accurately captures static characteristics for...
In this paper we have shown the modeling of Lateral Double-Diffused MOS (LDMOS) transistor. A LDMOS structure can be divided into two parts, intrinsic channel and extended drift region. The intinsic channel region is modeled by industry standard BSIM6 model and extended drift region has been modeled by the modified CMC standard model of R3. The R3 model of non-linear resistor, which includes physical...
In this letter, we model future generation SiGe FinFETs using the industry standard compact model BSIM-CMG. BSIM-CMG is enhanced to model these aggressively scaled devices. It is found that in these narrow fin (fin width $W_{\textrm {fin}} = 12$ nm) devices spacer region resistance behaves nonlinearly with drain-current. This nonlinear resistance behavior arises due to the saturation of carrier...
The aggressive downscaling of advanced bulk CMOS technologies demands MOSFET models that are able to describe accurately the behavior of devices accounting for all the physical phenomena. A reliable model should have the ability to handle all the different operating regions of the MOS transistor in the whole geometry range of one technology. Targeting to meet the aforementioned needs, the new charge-based...
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