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We have performed an experimental study of the effects of ionizing radiation and bias-temperature stress on Si MOS devices with HfSiON gate dielectrics. We compare the responses of homogeneous high-SiN films and low-SiN films that contain crystalline HfO. We observe that the low-SiN films are more sensitive to ionizing radiation than the high-SiN films. In particular, the low-SiN film that includes...
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