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This paper describes the first single impurity metrology study and the first experimental study of the behavior of the active cross-section area in function of gate voltages (VG) for undoped FinFETs. From one side we show how we can identify chemical species, electric field and position for a donor present in the channel of a doped FinFET. From another side, for the undoped devices, we propose a mechanism...
Highly phosphorous-doped nanowires in silicon (Si:P NW) represent the ultimate nanowire scaling limit of 1 atom thickness and a few atoms width. Experimental data are compared to an atomistic full-band model. Charge-potential self-consistency is computed by solving the exchange-correlation LDA corrected Schrödinger-Poisson equation. Transport through donor bands is observed in Si:P NW at low temperature...
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