The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We propose a novel method that exploits BTI to partially offset variation and thus improve SRAM Vmin and yield. We show correlation between a bitcell's power-up state and its static noise margin. By applying stress with periodic re-power-up, device mismatch can be compensated by BTI induced changes. The proposed method has no extra design and area cost. It can be applied during burn-in test to offset...
This paper analyzes write ability for SRAM cells in deeply scaled technologies, focusing on the relationship between static and dynamic write margin metrics. Reliability has become a major concern for SRAM designs in modern technologies. Both local mismatch and scaled VDD degrade read stability and write ability. Several static approaches, including traditional SNM, BL margin, and the N-curve method,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.