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GaN microdomes were fabricated and measured as both an antireflection surface and a light extraction enhancement structure. The combination of self-assembled micro/nanosphere lithography and reactive ion etching process was used to fabricate GaN microdomes with different aspect ratios. ${\rm SiO}_{2} $ microspheres with diameters of 1000 and 500 nm, deposited on top of the GaN substrate using a dip-coating...
GaN nanostructures with various effective refractive index profiles were numerically studied as broadband omnidirectional antireflection structures for concentrator photovoltaics, as compared to that of the conventional GaN with flat surface.
GaN microdomes are studied as a broadband omnidirectional anti-reflection structure for high efficiency multi-junction concentrated photovoltaics. Simulation and experiment studies indicate a significant reduction of reflectance from the GaN mcirodomes.
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