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An electro-thermal feedback model for multi-finger power SiGe heterojunction bipolar transistor (HBT) was presented in this paper. Based on the model, the influence of the change of emitter finger spacing on the surface temperature distribution of SiGe HBT was investigated. It is found that under the same bias conditions, with the increase of emitter finger spacing, the peak junction temperature drops...
Based on the electro-thermal feedback model for multi-finger power SiGe heterojunction bipolar transistor (SiGe HBT), this article analyzes the effect of base heavy doping on thermal characteristic of SiGe HBT. Because of the effect of base heavy doping, SiGe HBT will produce bandgap narrowing which decreases the collector current density and affects the device thermal distribution. By analyzing the...
In this paper, the IC-VBE characteristic of bipolar transistors are described by novel analytical formulations, which for the first time present the expression of collect current in the second fly-back point. Through the analytical formulations, it is found that a smaller emitter ballast resistance can make the collector current achieve the second fly-back point before transistors are burned-out,...
A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with non-uniform finger length and non-uniform finger spacing was proposed to improve the thermal stability. Thermal simulation for a ten-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional structure...
A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with segmented emitter fingers and nonuniform segment spacing was proposed to improve the thermal stability. Thermal simulation for a ten-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional emitter structure,...
With a three-dimensional thermal-electrical model, a non-uniform emitter length structure in multi-finger SiGe heterojunction bipolar transistors (HBTs) is presented to improve thermal stability. Compared with the traditional uniform emitter length design, the peak temperature of multi-finger SiGe HBT with non-uniform length is lowered. Therefore, it can operate at large current and has a higher power...
For power bipolar transistors, the emitter-ballasting-resistor is usually used to improve the thermal stability. However, the ballasting-resistor degrades the output power, power gain, power-added efficiency (PAE) of the transistor. In this paper, the thermal stability can be improved substantially by adjusting either the spacing or length of the emitter fingers without using ballasting resistors...
For power bipolar transistors, the emitter-ballasting-resistor is usually used to improve the thermal stability. However, the ballasting-resistors degrade the output power, power gain, power-added-efficiency (PAE) of the transistor. In this paper, the thermal stability can be improved substantially by adjusting either the spacing or length of the emitter fingers without using ballasting resistors...
Base on the thermal-electric feedback network analysis, the thermal stability factor S is presented to express the thermal stability of the device. It is shown that the self-heating effect is compensated completely and the electrical characteristic of device won't shift when S=0. Furthermore, the expression of the minimum ballasting resistance R c of HBT to compensate the self-heating effect is presented...
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