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In this paper, a new AC-DC single stage three-level resonant converter has been proposed for high voltage DC distribution system of datacenters applications. This converter convert universal input voltage range (90–265Vrms) to 380VDC with high power factor. The proposed topology integrates a bridgeless boost converter and a half-bridge three level resonant converter. Voltage stresses on the switches...
This paper addresses the optimal design of leakage inductance of the high-frequency transformer in dual active bidirectional converter stages of cascaded bidirectional converters. By the analyzing realization condition of zero-voltage-switching and the method to reduce reactive power under controlling of single phase shifting control strategy, the optimized circuit parameters are selected. An experimental...
How to reduce the current ripple and the RMS current of the output capacitor is an important factor which the designers are concerned with when designing the DC/DC converter. In order to get greater steady-state inductance and smaller transient inductance, coupled inductors used in N-phase Interleaved Buck DC/DC Converter are analyzed and designed. The peak to peak current and the power loss can be...
Coupling inductors for magnetic integration used in 3-phase interleaving Buck DC/DC converter are studied in detail and the equivalent steady state inductance and transient inductance are calculated thoroughly. In order to improve the steady state and transient performance of the converters, reverse coupling is used to obtain larger equivalent steady state inductance and smaller equivalent transient...
A novel fabrication process has been demonstrated to create cost-effective, high-yield, and high-quality integrated passive devices (IPDs) on GaAs substrate. Various materials and processing approaches to thin film resistors (TFRs), spiral inductors, and metal-insulator-metal (MIM) capacitors have been evaluated in terms of cost, yield, and device performance. To further reduce the total cost, SU-8...
Conclusions IPD technology is paramount in furthering the performance and integration of functionality as well as shrinking in size in RF front-end systems. The proposed fabrication process enables a high performance integration of passive technology; the reliable NiCr TFR, spiral inductor with high Q factor, and MIM capacitor of compact size with high yield are realized by the IPD technology, and...
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