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We report the first phase-resolved measurements of nonlinear pulse propagation in silicon photonic devices. These demonstrations indicate soliton-like behavior, despite the presence of two-photon absorption (TPA) and free-carriers impacting the dynamics at 1.55 μm.
Silicon represents a mature, affordable platform for fabricating electronic and optical signal processing devices. We discuss all-optical 170 Gbit/s switching, a 42 Gbit/s electro-optic modulator, and proof-of-concept results for a surface plasmon polariton absorption modulator.
Silicon nanophotonics is considered a key enabler of future photonic-electronic information processing systems. Driven by substantial research investments, photonic integration on silicon-on-insulator (SOI) substrates has reached a degree of maturity that already permits industrial adoption. Silicon-organic hybrid integration (SOH) is a viable extension of the SOI material system for efficient electro-optic...
We report FWM (−9dB conversion) in a short (80μm) silicon dispersion engineered slow (c/30) light photonic crystal waveguide through launching a pulsed pump and a CW probe signal.
A 40 Gbit/s electro-optic modulator is demonstrated. The modulator is based on a slotted silicon waveguide filled with an organic material. The silicon organic hybrid (SOH) approach allows combining highly nonlinear electro-optic organic materials with CMOS-compatible silicon photonics technology.
All-optical wavelength conversion of 56 Gbit/s NRZ-DQPSK based on four-wave mixing is demonstrated in a silicon-organic hybrid strip waveguide operated in TM mode.
We propose to suppress intra-channel four-wave-mixing (IFWM) in 40 Gbit/s optical transmission by applying a phase modulation at 10 GHz. Both numerical simulations and experiments show that the penalty induced by IFWM is significantly reduced
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