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We present a detailed study of back bias (Vbb) impact on UTBB devices with a gate length (LG) of 25nm and BOX thicknesses (TBOX) of 25nm and 10nm, respectively. It is reported for the first time that the Vt is modulated by Vbb across a wide temperature range, from −40°C to 125°C. The device electrostatics and reliability, under various Vbb are investigated. The short channel effect (SCE) is well maintained...
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