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A state-of-the-art 520–620-GHz receiver front end working at room temperature was designed, built, and measured. The receiver front-end features a GaAs-Schottky diode-based subharmonic mixer and a 260–307-GHz doubler, both fabricated with the new LERMA-LPN Schottky process on a 4--thick GaAs membrane suspended in a waveguide with metal beamleads. Small-area mesas and optimized transmission...
This paper presents the design and simulation of a novel fixed-tuned 310-350-GHz wide-band sub-harmonic mixer. The mixer is based on an anti-parallel pair of GaAs Schottky diodes fabricated at European company. The circuits are fully integrated with the RF/IF filter and flip-chipped onto a suspended quartz-based substrate. A best double-sideband-mixer loss of 5.7 dB was achieved with 5 mW of LO power...
This paper presents the optimization and design of a low-loss fixed-tuned 215-235-GHz sub-harmonic mixer, pumped by planar GaAs Schottky diodes fabricated by European company for space-borne radiometers. The circuits are fully integrated with the RF/IF filter and flip-chipped onto a suspended quartz-based substrate. The GaAs Gunn oscillator is used as the local-oscillator (LO) and this paper also...
Internally-matched 4H-SiC MESFET with 4times20 mm of the total gate width was demonstrated. The SiC MESFET structure consists of a channel layer with doping concentration of 2.3times1017 cm-3 and a cap layer with doping concentration of 1.5times1019 cm-3. A lightly p-doped buffer layer was employed between the substrate and the channel layer. Dry etching and high-temperature oxidation were employed...
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