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In this paper, new analytic models of TSV are proposed in a wide band of frequencies (DC-40GHz). These models are defined with a RLCG transmission line model in two specific configurations, a two TSV line and a often called "H-type" line of three TSV. Each RLCG parameters are compared to those extracted from electromagnetic modeling in a wide band of frequencies. Finally, a last comparison...
Evaluation of Through Silicon Via (TSV) electrical parameters is mandatory to improve heterogeneous 3D chip performance in the frame of a “more than Moore” roadmap. Accurate modeling of TSV is consequently essential to perform design, material and process optimizations. This paper presents a frequency dependent analytical model including MOS effect of high aspect ratio TSV achieved in a full CMOS...
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