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Wide bandgap semiconductors, particularly In2O3:Sn (ITO), are widely used as transparent conductive electrodes in optoelectronic devices. Nevertheless, due to the strohave beenng scattering probability of high‐concentration oxygen vacancy (VO) defects, the mobility of ITO is always lower than 40 cm2 V−1 s−1. Recently, hydrogen‐doped In2O3 (In2O3:H) films have been proven to have high mobility (>100 cm...
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