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A niching genetic algorithm (NGA) was presented to optimize a SiC-bulk crystal growth system by PVT. The NGA based on clearing mechanism and its combination method with heat transfer model for SiC crystal growth were described in details. Then three inverse problems for optimization of growth system were carried out by NGA. Firstly, the radius of blind hole was optimized to decrease the radial temperature...
A 2-D numerical global model was applied to study effects of induction heating system on silicon carbide single crystal growth by a finite element method. Models with different coil radii and different electrical frequencies were carried out to investigate the relationship between coil design and SiC crystal growth process while the temperature of the monitoring point was fixed at about 2300K. The...
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