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We report high-precision, ∼femto-Faraday-level (1fF=10−15F) measurements of capacitance-voltage (C-V) characteristics of suspended and mechanically movable silicon nanowires (SiNWs) with widths down to 50nm, which are coupled to their localized side gate electrodes via nanoscale air gaps. To the best of our knowledge, this effort is the first direct measurement of C-V behavior, combined with analysis...
Growing number of important application areas, including automotive and industrial applications as well as space, avionics, combustion engine, intelligent propulsion systems, and geo-thermal exploration require electronics that can work reliable at extreme conditions — in particular at a temperature > 250°C and at high radiation (1–30 Mrad), where conventional electronics fail to work reliably...
We report on the measurements and modeling of mechanically-coupled arrays of very thin silicon carbide nanowire (SiC NW) nanomechanical resonators. The exceptional mechanical properties and attractive optical properties of SiC make it highly interesting for resonant nanoelectromechanical systems (NEMS), with resonant modes operating at high frequencies that can be exploited for resonance-based signal...
We report an experimental study on AC measurements of contact-mode switches based on silicon carbide (SiC) nanoelectromechanical systems (NEMS). We describe the development of circuits and measurement techniques for recording long cycles of AC switching characteristics of SiC NEMS featured by ultrasmall device movable volumes (at ∼1μm3 level) and contact areas (only ∼0.01–0.1μm2), and challenging...
We present demonstration and experimental results of four-terminal nanoscale electromechanical switches with a novel dual-gate design in a lateral configuration based on polycrystalline silicon carbide (poly-SiC) nanocantilevers. The switches operate at both room temperature and high temperature up to T≈500°C in ambient air with enhanced control over the distributed electrostatic actuation force,...
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