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2D layered materials have emerged in recent years as a new platform to host novel electronic, optical, or excitonic physics and develop unprecedented nanoelectronic and energy applications. By definition, these materials are strongly anisotropic between the basal plane and cross the plane. The structural and property anisotropies inside their basal plane, however, are much less investigated. Black...
Micro‐electromechanical (MEM) switches, with advantages such as quasi‐zero leakage current, emerge as attractive candidates for overcoming the physical limits of complementary metal‐oxide semiconductor (CMOS) devices. To practically integrate MEM switches into CMOS circuits, two major challenges must be addressed: sub 1 V operating voltage to match the voltage levels in current circuit systems and...
In article number 1703621, Zheng You, Jie Yao, Junqiao Wu, and co‐workers demonstrate a micro‐electromechanical (MEM) switch with 0.2 V operating voltage and ≳106 safe operating cycles in ambient air, which is mainly enabled by the abrupt phase transition of nanolayered vanadium dioxide slightly above room temperature. This device is also used to demonstrate a temperature alarm/switch with ultralow...
Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin‐film ferroelectric field‐effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics...
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