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One‐pot chemical vapor deposition (CVD) growth of large‐area Janus SeMoS monolayers is reported, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these 2D semiconductor monolayers takes place upon the thermodynamic‐equilibrium‐driven exchange of the bottom Se atoms of the initially grown MoSe2 single crystals...
Janus Monolayers
In article number 2205226, Bernhard Urbaszek, Antony George, Andrey Turchanin, and co‐workers present a new method to grow large‐scale and high‐structural‐quality SeMoS Janus monolayers on Au substrates. Their high optical quality is demonstrated by optical and magneto‐optical measurements which reveal the strong exciton‐phonon coupling and enable an exciton g‐factor of −3.3 to be...
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