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Titanium-doped indium oxide (In2O3) transparent conductive thin films were deposited on glass and sapphire (0001) substrates with/without oxygen atmosphere by DC magnetron sputtering at 300 °C. The content of titanium is estimated to be about 1.8 at.% using energy dispersive spectroscopy. The smooth surfaces were covered with more uniform octahedral grains. X-ray diffraction measurements indicated...
Ti-doped In2O3 thin films have been prepared on glass substrate by radio frequency (RF) sputtering with different sputtering powers (90, 120, 150, and 180 W) at 330 °C. The influence of sputtering power on the structural, electrical and optical properties of the deposited thin films is investigated. The average transmittance of the thin films in the wavelength range of 500-1100 nm is over 90%. Low...
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