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In this work, we propose two threshold voltage (VTH) tuning methods for bulk FinFETs with replacement high-k metal gate. The first method is to perform a vertical implantation into fin structure after dummy gate removal, self-aligned forming halo & punch through stop pocket (halo & PTSP) doping profile. The second method is to execute P+/BF2+ ion implantations into the single common work function...
In this letter, for the first time, a novel vertical implantation is introduced in bulk FinFETs and used to form self-aligned halo and punch-through stop pocket (PTSP) at the same time. This implantation is carried out after dummy gate removal in the all-last high-$k$ /metal gate process. The formed halo and PTSP doping profiles improve short channel effect control and reduce $V_{\mathrm {\mathbf {TH}}}$ ...
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