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Multi‐resonance thermally activated delayed fluorescence (MR‐TADF) emitters have drawn considerable attention because of their remarkable optoelectronic properties of high emission efficiency and narrow emission profile, and represent an active subject of cutting‐edge research in the organic electroluminescence (EL). However, the slow reverse intersystem crossing (RISC) rate of MR‐TADF emitter caused...
Monolayer WxMo1−xS2‐based field effect transistors are demonstrated for the first time on the monolayer WxMo1−xS2 flake, which is grown by the chemical vapor deposition method under an atmospheric pressure. Detailed material studies using Raman and photoluminescence measurements have been carried out on the as‐grown monolayer WxMo1−xS2. Electronic band structure of monolayer WxMo1−xS2 has been calculated...
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