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Being operated with 0.3V supply voltage in a standard 65nm CMOS process, a new CMOS temperature compensated voltage reference circuit is proposed with subthreshold transistors and native nMOS. The reference drain current provided by the gate voltage of a subthreshold nMOS output transistor is nearly independent of temperature due to the existence of mutual compensation of mobility and threshold voltage...
A bandgap voltage reference (BGR) circuit designed with the low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3-mum LTPS process. The experimental results have shown that the measured temperature coefficient of the new proposed bandgap voltage reference circuit is around 195 ppm/degC under the supply...
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