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We propose an efficient beam-wave interaction circuit employing a multi-tunnel, slow-wave structure for W-band backward-wave oscillators. The tunnel is disposed one of above and below the beam tunnel, which enhances RF characteristics. The interaction circuit is prepared using a deep-reactive ion etched (DRIE), multi-level microfabrication on silicon wafers. The return loss shows strong resonances...
The experimental implementation of W-band backward-wave oscillator is achieved by using a multilevel microfabrication of interaction circuit including beam tunnel, slow-wave structure, and output transition, on deep reactive ion etched (DRIE) and metal deposited silicon wafers. The interaction circuit shows precise accuracy in full 3 dimensions, and the return loss measurement agrees well with HFSS...
We report a W-band backward-wave oscillator using micro-fabrication technologies by which a fully 3-dimensional slow-wave interaction circuit is successfully employed on multi-bonded silicon wafers. MEMS (micro-electromechanical systems) technologies such as deep RIE (reactive ion etching) and thermocompressive hermetic bonding are applied to achieve highly accurate dimensional structures for high...
The precise patterning of periodic slow-wave structures can be successfully accomplished by modern photolithography technology on flat substrates in high frequency regime (>100 GHz). When the aspect ratio of the structure between in-plane and out-of-plane dimensions becomes higher than unity, however, controlled MEMS (micro-electromechanical systems) technologies are strongly required to achieve...
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