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The effects of annealing atmosphere (Vacuum, Air, N2, and O2) on performance of dual high‐k gate dielectrics ITO TFTs are studied. The ITO TFTs annealed in N2 show excellent electrical properties, including a saturation mobility of 18.0 cm2V–1s–1, a subthreshold swing of 215.4 mV/decade, and an on‐to‐off state current ratio of 1.79 × 109. This work drives the application of ITO TFTs in the field of...
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