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Ultra‐lightweight resistive switching memory based on protein has been demonstrated. The memory foil is 0.4 mg cm−2, which is 320‐fold lighter than silicon substrate, 20‐fold lighter than office paper and can be sustained by a human hair. Additionally, high resistance OFF/ON ratio of 105, retention time of 104 s, and excellent flexibility (bending radius of 800 μm) have been achieved.
On page 2715, physically transient resistive switching memory based on silk fibroin is demonstrated by Y. Hao, X. Chen, and co‐workers. The memory devices can be absolutely dissolved in deionized water or phosphate‐buffered saline in 2 hours. The transient devices have the potential for application in secure data storage systems and biocompatible electronics.
Physically transient resistive switching devices based on silk protein are successfully demonstrated. The devices can be absolutely dissolved in deionized water or in phosphate‐buffered saline in 2 h. At the same time, a reasonable resistance OFF/ON ratio of larger than 102 and a retention time of more than 104 s are achieved for nonvolatile memory applications.
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