The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Rectangular piezoresistive cantilevers with stress concentration holes opened were designed and fabricated in order to increase the response signals of piezoresistive cantilever first. Both the simulations and the measurements on the cantilever sensitivity show that this design can obviously result in an improvement on the displacement sensitivity of the piezoresistive cantilever. After a characterization...
In this paper, we assess the potential for bulk CMOS, SOI CMOS, and double-gate CMOS to extend scaling to 10 nm channel length. In addition to the required replacement of silicon dioxide and polysilicon gates by high-k insulator and metal gates for all device types, specific technology requirements are discussed for each device type. 10 nm bulk CMOS requires abrupt placement of n- and p-type dopants...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.