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In this paper, we present the results of a detailed study done on the correlation between frequency dispersion observed in AC admittance measurements and threshold voltage shifts observed in BTI reliability measurements on III-V MOS devices. We developed a detailed AC admittance model for MOS devices with border traps to study the effect of trap parameters on the AC admittance. We show, with the help...
In this work, without employing any IPL, excellent electrical performances for the Ge MOS devices, i.e. MOSCAPs and MOSFETs, have been demonstrated using ultra high vacuum (UHV) deposited Ga2O3(Gd2O3) [GGO] directly on Ge (100) with the incorporation of fluorine. The GGO/Ge interface is atomically abrupt with negligible Ge inter-diffusion and highly thermodynamically stable withstanding high temperature...
To address the integration of the high-mobility Ge/III-V MOSFET, a common gate stack (CGS) solution is proposed for the first time and demonstrated on Ge and InGaAs channels with combined hole and electron field-effect mobility values up to 400 cm2/eV-s and 1300 cm2/eV-s. Based on the duality found on the InGaAs/Ge MOS system, this approach aims to integrate the InGaAs/Ge MOSFET processes for high...
Electrical characteristics of oxide-In0.2Ga0.8As interface in ultra-high vacuum (UHV)-deposited Al2O3(3 nm)/Ga2O3 (Gd2O3) (8.5 nm) on n- and p-In0.2Ga0.8As/GaAs are studied. Capacitance-voltage (C-V) measurements under light illumination and under wide range of temperatures as well as corresponding conductance-voltage (G-V) measurements were carried out. Extremely high-quality interfaces with free-moving...
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