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In this work, we will review the current progress in high mobility devices and new device architectures. With main focus on (Si)Ge for pMOS and In(Ga)As for nMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed. Next to that, the advantages of tunnel FETs, vertical logic and in general heterogeneous integration will be highlighted.
In this work, we will review the current progress in integration and device design of high mobility devices. With main focus on (Si)Ge for pMOS and In(Ga)As for nMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed.
In this work, we will give an overview of the innovations in materials and new device concepts that will be needed to continue Moore’s law to the sub-10nm technology nodes. To meet the power and performance requirements high mobility materials in combination with new device concepts like tunnel FETs and gate-all-around devices will need to be introduced. As the density is further increased and it...
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