The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We study the impact of random dopant fluctuation (RDF) on electrical characteristics of 10-nm-gate high-κ/metal gate gate-all-around silicon nanowire MOSFET devices. To provide the best accuracy of device simulation, model parameters are validated by using full quantum mechanical simulation and calibrated with experimental results. Physical mechanism of RDs inside channel and penetration from the...
In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-K/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied. The small aspect ratio device has greater immunity of RDF, while suffers from PVE and WKF.
In this work, we investigate workfunction (WK) fluctuation of gate-all-around Si nanowire MOS devices by solving a sets of 2D Schrödinger-Poisson equations. We discuss characteristic fluctuation in view of randomly interactive quantum confinement with subbands and wavefunctions. The influences of metal-grain size and channel width on the random WK-induced characteristic fluctuation are studied; additionally,...
In this work, we use an experimentally calibrated 3D quantum-mechanically-corrected device simulation to study different types of line edge roughness (LER) on the DC/AC and digital circuit characteristic variability of 14-nm-gate HKMG trapezoidal bulk FinFETs. By using a time-domain Gaussian noise function as the LER-profile generator, we compare four types of LER: fin-LER inclusive of resist-LER...
In this paper, we estimate the influence of random dopants (RDs), interface traps (ITs), and random work functions (WKs) using the experimentally calibrated 3D device simulation on DC characteristic of high-к / metal gate n- and p-type bulk fin-typed field-effect-transistors. We further study these intrinsic parameter fluctuations' impact on drain induced barrier lowering (DIBL). The main findings...
The HKMG bulk FinFET has been one of major device technologies. However, the bulk FinFETs' characteristics has been affected to different extents by various fluctuation sources, such as random dopants (RDs), interface traps (ITs), work functions (WKs), and the process variations (PVs) [1–5]. In this work, we for the first time study the 16-nm-gate HKMG bulk FinFET's characteristic fluctuation resulting...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.