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Utilizing multi‐domain formation in Co/Pt multilayers, how to achieve multilevel storage in spin‐orbit‐torque MRAM is demonstrated in article number 1601575 by Chih‐Huang Lai and co‐workers. It is rather remarkable that, by modulating the writing pulse conditions, precise control of the final magnetization states can be achieved, independent of the initial configurations. The initialization‐free multilevel...
By engineering multidomain formation in Co/Pt multilayers, it is demonstrated how multilevel storage can be achieved by spin–orbit torque switching. It is rather remarkable that, by modulating the writing pulse conditions, the final magnetization states can be controlled, independent of the initial configurations. The initialization‐free multilevel memory advances the spin–orbit‐torque magnetic random...
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