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Uniform nanotube diameter and nanoarray pitch are essential for low-cost and high-yield manufacturability of billions of carbon nanotube MOSFETs (CN-MOSFETs) with various sizes on a single chip. In this paper, the optimum uniform diameter and pitch of 16nm n-type CN-MOSFETs are determined with two different substrate bias voltages for a wide range of transistor sizes. A new quality metric is evaluated...
Carbon-Nanotube MOSFET (CN-MOSFET) is a promising future device candidate. The electrical characteristics of 16nm N-type CN-MOSFETs are explored in this paper. The optimum high-speed N-type CN-MOSFET device profiles with different number of tubes are identified for achieving the highest on-state to off-state current ratio (Ion/Ioff) with a high substrate (bottom gate) bias voltage. Technology development...
Carbon nanotube MOSFET (CN-MOSFET) is a promising future device candidate. The electrical characteristics of 16nm P-type CN-MOSFETs are explored in this paper. The optimum P-type CN-MOSFET device profiles with different number of tubes are identified with a low substrate bias voltage for high-speed operation. Technology development guidelines are provided for achieving high-speed, area efficient,...
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