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We demonstrate a quasi-AlGaN/GaN heterostructure field-effect transistor (HFET). A quasi-AlGaN barrier layer consists of ultrathin GaN/AlN superlattices (SLs), resulting in low sheet resistance in the heterostructures. The dc characteristics show a large maximum drain current density (Idmax = 830 mA/mm) and low on-resistance (Ron = 4.3 Ω·mm) with a source-drain separation of 12 μm. The Id reduction...
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